PHK28NQ03LT NXP Semiconductors, PHK28NQ03LT Datasheet - Page 3

• Manufacturer Part Number: PHK28NQ03LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHK28NQ03LT_3
Product data sheet
Fig 1.
Fig 3.
(%)
I
der
120
80
40
0
function of solder point temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
10
D
10
10
−1
1
2
10
−1
limit R
100
DSon
= V
DS
150
/I
D
T
sp
03aa25
(°C)
Rev. 03 — 8 December 2009
200
1
DC
Fig 2.
P
(%)
der
120
80
40
0
function of solder point temperature
Normalized total power dissipation as a
0
10
N-channel TrenchMOS logic level FET
50
V
DS
t
100 μs
1 ms
10 ms
100 ms
(V)
p
= 10 μs
PHK28NQ03LT
100
03ak85
10
2
150
© NXP B.V. 2009. All rights reserved.
T
sp
03aa17
(°C)
200
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