PHK28NQ03LT NXP Semiconductors, PHK28NQ03LT Datasheet - Page 2

• Manufacturer Part Number: PHK28NQ03LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PHK28NQ03LT_3
Product data sheet
Pin
1
2
3
4
5
6
7
8
Type number
PHK28NQ03LT
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
Symbol
S
S
S
G
D
D
D
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
limiting drain current
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
SO8
Package
Name
Description
source
source
source
gate
drain
drain
drain
drain
Description
plastic small outline package; 8 leads; body width 3.9 mm
Conditions
T
T
T
T
T
T
T
T
j
j
sp
sp
sp
sp
sp
sp
≥ 25 °C; T
≤ 150 °C; T
= 100 °C; V
= 25 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 25 °C; t
Rev. 03 — 8 December 2009
j
p
p
≤ 150 °C
j
GS
≥ 25 °C; R
≤ 10 µs; pulsed; see
≤ 10 µs; pulsed
GS
Figure 2
= 10 V; see
= 10 V; see
Simplified outline
GS
= 20 kΩ
Figure 1
Figure 1
SOT96-1 (SO8)
8
1
Figure 3
and
N-channel TrenchMOS logic level FET
3
5
4
PHK28NQ03LT
Graphic symbol
Min
-
-
-
-
-
-
-
-55
-55
-
-
G
mbb076
© NXP B.V. 2009. All rights reserved.
Max
30
30
20
15
23.7
60
6.25
150
150
5.2
20.8
D
Version
SOT96-1
S
Unit
V
V
V
A
A
A
W
°C
°C
A
A
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