PHT8N06LT NXP Semiconductors, PHT8N06LT Datasheet - Page 3
PHT8N06LT
Manufacturer Part Number
PHT8N06LT
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.PHT8N06LT.pdf
(9 pages)
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Philips Semiconductors
AVALANCHE LIMITING VALUE
January 1998
TrenchMOS
Logic level FET
SYMBOL PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
transistor
CONDITIONS
I
V
D
GS
= 2.5 A; V
= 5 V; R
3
DD
GS
= 50 ; T
25 V;
sp
= 25 ˚C
MIN.
-
TYP.
-
Product specification
PHT8N06LT
MAX.
30
Rev 1.100
UNIT
mJ
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