PHT8N06LT NXP Semiconductors, PHT8N06LT Datasheet - Page 4

• Manufacturer Part Number: PHT8N06LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
January 1998
TrenchMOS
Logic level FET
ID/A
ID% = 100 I
100
0.1
I
10
Fig.2. Normalised continuous drain current.
D
1
120
110
100
120
110
100
RDS(ON) = VDS/ID
90
80
70
60
50
40
30
20
10
1
90
80
70
60
50
40
30
20
10
& I
0
0
Fig.3. Safe operating area. T
Fig.1. Normalised power dissipation.
0
0
DM
PD%
ID%
= f(V
PD% = 100 P
20
20
D
/I
D 25 ˚C
DS
DC
); I
40
40
transistor
DM
= f(T
single pulse; parameter t
60
60
Tmb / C
D
Tmb / C
sp
/P
10
); conditions: V
Normalised Current Derating
D 25 ˚C
80
80
Normalised Power Derating
VDS/V
100
100
= f(T
sp
sp
= 25 ˚C
120
120
)
GS
140
140
tp =
1 us
100 us
10ms
100ms
10us
1 ms
5 V
100
p
4
Fig.5. Typical output characteristics, T
Fig.6. Typical on-state resistance, T
115
110
105
100
0.01
100
40
30
20
10
95
90
85
80
75
70
0.1
10
0
1
5
0
RDS(ON)/mOhm
Drain current, ID (A)
Zth/ (K/W)
Fig.4. Transient thermal impedance.
0.5
0.2
0.1
0.05
0.02
1.0E-06
Z
R
th j-sp
10
7
6
I
DS(ON)
2
D
= f(V
10
= f(t); parameter D = t
Drain-source voltage, VDS (V)
0.0001
= f(I
ID/A
DS
4
); parameter V
D
); parameter V
t/s
15
0.01
6
P
D
4
Product specification
VGS = 5.0 V
t
2.4
p
PHT8N06LT
T
GS
20
4.8
4.6
1
4.2
4.4
GS
p
8
/T
D =
j
j
= 25 ˚C .
= 25 ˚C .
t
T
5
p
4.6
t
4.0
3.6
3.2
3.0
2.6
Rev 1.100
100
10
25