PMK35EP NXP Semiconductors, PMK35EP Datasheet - Page 4

• Manufacturer Part Number: PMK35EP
• Description: Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
PMK35EP
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
DSS
GSS
Fig 4.
(BR)DSS
GS(th)
DSon
G(tot)
GS
GD
Z
(K / W)
th(j−sp)
10
10
10
10
−1
−2
1
2
10
Transient thermal impedance from junction to solder point as a function of pulse duration
−4
Characteristics
0.1
0.02
0.2
0.05
single pulse
δ = 0.5
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
10
−3
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
I
T
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
= 25 °C; see
= -250 µA; V
= -250 µA; V
= -250 µA; V
= -250 µA; V
= -250 µA; V
= -9.2 A; V
Figure
Figure
Figure
Figure 9
Figure 9
Figure
= -30 V; V
= -30 V; V
= 20 V; V
= -20 V; V
= -10 V; I
= -10 V; I
= -4.5 V; I
10
Rev. 02 — 29 April 2010
−2
7; see
7; see
7; see
10; see
DS
D
D
DS
D
GS
GS
DS
GS
GS
DS
DS
DS
Figure
= -9.2 A; T
= -9.2 A; T
= -15 V; V
= -6.8 A; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= V
Figure 8
= V
Figure 8
= V
Figure 8
= 0 V; T
= 0 V; T
Figure 9
GS
GS
GS
11; see
; T
; T
; T
j
j
j
j
= 25 °C
j
j
j
j
GS
= 25 °C
= 70 °C
= 25 °C
P-channel TrenchMOS extremely low level FET
j
j
j
j
= 25 °C
= -55 °C
= 25 °C;
= 150 °C;
= 25 °C;
= 150 °C;
= -55 °C;
= 25 °C;
10
= -10 V;
Figure 12
−1
Min
-30
-27
-1
-0.7
-
-
-
-
-
-
-
-
-
-
-
1
P
Typ
-
-
-
-
-
-
-
-
-
16
25
26
42
8
6
t
PMK35EP
p
t
p
T
(s)
© NXP B.V. 2010. All rights reserved.
003aab605
δ =
Max
-
-
-3
-
-3.3
-1
-10
-100
-100
19
31
35
-
-
-
T
t
t
p
10
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
nC
nC
nC
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