PMK35EP NXP Semiconductors, PMK35EP Datasheet - Page 8

• Manufacturer Part Number: PMK35EP
• Description: Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Package outline
Fig 15. Package outline SOT96-1 (SO8)
PMK35EP
Product data sheet
SO8: plastic small outline package; 8 leads; body width 3.9 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
inches
UNIT
mm
VERSION
OUTLINE
SOT96-1
0.069
max.
1.75
A
0.010
0.004
0.25
0.10
A
1
0.057
0.049
1.45
1.25
A
076E03
2
IEC
1
8
Z
pin 1 index
0.25
0.01
A
y
3
e
0.019
0.014
0.49
0.36
b
p
D
0.0100
0.0075
All information provided in this document is subject to legal disclaimers.
0.25
0.19
MS-012
JEDEC
c
b
REFERENCES
p
0.20
0.19
D
5.0
4.8
5
4
0
(1)
Rev. 02 — 29 April 2010
w
0.16
0.15
E
4.0
3.8
(2)
M
JEITA
scale
1.27
0.05
2.5
c
e
A
0.244
0.228
2
H
6.2
5.8
A
E
P-channel TrenchMOS extremely low level FET
1
0.041
1.05
5 mm
L
H
0.039
0.016
E
E
1.0
0.4
detail X
L
p
L
0.028
0.024
L
0.7
0.6
Q
p
Q
PROJECTION
(A )
EUROPEAN
0.25
0.01
3
A
v
θ
0.25
0.01
A
w
X
v
M
PMK35EP
0.004
0.1
A
© NXP B.V. 2010. All rights reserved.
y
ISSUE DATE
99-12-27
03-02-18
0.028
0.012
Z
0.7
0.3
(1)
SOT96-1
8
0
θ
o
o
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