PMK50XP NXP Semiconductors, PMK50XP Datasheet - Page 3

• Manufacturer Part Number: PMK50XP
• Description: Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PMK50XP
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
(%)
I
der
120
80
40
0
function of solder point temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
50
100
150
Conditions
25 °C ≤ T
25 °C ≤ T
T
see
T
see
T
see
T
T
T
All information provided in this document is subject to legal disclaimers.
T
sp
sp
sp
sp
sp
sp
003aab642
sp
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 25 °C; t
(°C)
Figure
Figure 1
Figure 3
200
Rev. 02 — 28 April 2010
j
j
≤ 150 °C
≤ 150 °C; R
1; see
p
p
GS
≤ 10 µs; pulsed;
≤ 10 µs; pulsed
GS
Figure 2
= -4.5 V;
Figure 3
= -4.5 V;
Fig 2.
GS
= 20 kΩ
P
(%)
P-channel TrenchMOS extremely low level FET
der
120
80
40
0
function of solder point temperature
Normalized total power dissipation as a
0
50
Min
-
-
-12
-
-
-
-
-55
-55
-
-
100
Typ
-
-
-
-
-
-
-
-
-
-
-
PMK50XP
150
© NXP B.V. 2010. All rights reserved.
T
003aab946
sp
150
Max
-20
-20
12
-7.9
-5
-31.6
5
150
-4.1
-16.4
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
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