PMK50XP NXP Semiconductors, PMK50XP Datasheet - Page 5
![Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/50/415041/sot096-1_3d_sml.gif)
PMK50XP
Manufacturer Part Number
PMK50XP
Description
Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.PMK50XP.pdf
(13 pages)
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Part Number:
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NXP Semiconductors
6. Characteristics
Table 6.
PMK50XP
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
V
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
I
see
I
see
V
T
V
R
I
see
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
D
S
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
G(ext)
= 25 °C; see
= -1.7 A; V
= -250 µA; V
= -250 µA; V
= -250 µA; V
= -250 µA; V
= -250 µA; V
= -4.7 A; V
= -4.7 A; V
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure 12
Figure 14
= -20 V; V
= -20 V; V
= -20 V; V
= -10 V; R
= 12 V; V
= -12 V; V
= -2.5 V; I
= -4.5 V; I
= -4.5 V; I
= 6 Ω
Rev. 02 — 28 April 2010
7; see
7; see
7; see
9; see
9; see
9; see
11; see
GS
DS
DS
DS
D
D
D
GS
GS
DS
GS
L
GS
GS
DS
DS
DS
Figure 13
= -10 V; V
= -10 V; see
= -2.3 A; T
= -2.8 A; T
= -2.8 A; T
= 10 Ω; V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= V
Figure 8
= V
Figure 8
= V
Figure 8
Figure 10
Figure 10
Figure 10
= 0 V; T
= 0 V; T
Figure 12
GS
GS
GS
; T
; T
; T
j
j
= 25 °C;
j
j
j
= 25 °C
GS
j
j
GS
= 25 °C
= 70 °C
= 25 °C
P-channel TrenchMOS extremely low level FET
j
j
j
j
j
j
= -55 °C
= 25 °C
= -55 °C;
= 150 °C;
= 25 °C;
= 25 °C;
= 150 °C;
= 25 °C;
= -4.5 V;
Figure
= -4.5 V;
11;
Min
-18
-20
-
-0.35
-0.55
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-0.75
-
-
-10
-10
56
64
40
10
2.2
1.3
-1.6
1020
140
100
8.5
7.5
82
35
-0.77
PMK50XP
© NXP B.V. 2010. All rights reserved.
Max
-
-
-1.1
-
-0.95
-1
-5
-100
-100
70
80
50
-
-
-
-
-
-
-
-
-
-
-
-1.2
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
V
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