PSMN013-100ES NXP Semiconductors, PSMN013-100ES Datasheet - Page 2

• Manufacturer Part Number: PSMN013-100ES
• Description: Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN013-100ES
Product data sheet
Pin
1
2
3
mb
Type number
PSMN013-100ES
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to drain
Table 1.
[1]
[2]
I2PAK
Package
Name
Symbol
Q
Avalanche ruggedness
E
DS(AL)S
G(tot)
Continuous current is limited by package.
Measured 3 mm from package.
Quick reference data
Parameter
total gate charge
non-repetitive
drain-source
avalanche energy
Description
plastic single-ended package (I2PAK); TO-262
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 September 2011
N-channel 100V 13.9mΩ standard level MOSFET in I2PAK.
Conditions
V
V
see
V
I
unclamped; R
D
Simplified outline
…continued
GS
DS
GS
= 68 A; V
Figure 14
= 10 V; I
= 50 V; see
= 10 V; T
SOT226 (I2PAK)
sup
D
j(init)
GS
1
= 25 A;
≤ 100 V;
mb
Figure
2
= 50 Ω
= 25 °C;
3
13;
PSMN013-100ES
Graphic symbol
Min
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
Typ
59
-
SOT226
Version
D
S
Max Unit
-
127
2 of 14
nC
mJ