PSMN013-100ES NXP Semiconductors, PSMN013-100ES Datasheet - Page 8

• Manufacturer Part Number: PSMN013-100ES
• Description: Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN013-100ES
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DSon
30
25
20
15
10
of drain current; typical values
0
V
V
V
V
GS(pl)
V
DS
GS(th)
GS
GS
(V) = 4.5
Q
20
GS1
5
6
I
Q
D
GS
Q
GS2
40
Q
G(tot)
10
Q
GD
60
20
All information provided in this document is subject to legal disclaimers.
003aad578
003aaa508
I
D
(A)
Rev. 3 — 29 September 2011
80
N-channel 100V 13.9mΩ standard level MOSFET in I2PAK.
Fig 13. Gate-source voltage as a function of gate
Fig 15. Input, output and reverse transfer capacitances
(pF)
V
(V)
10
C
10
10
GS
10
10
4
3
2
8
6
4
2
0
10
charge; typical values
as a function of drain-source voltage; typical
values
0
−2
10
15
−1
PSMN013-100ES
V
DS
30
= 50V
1
10
45
© NXP B.V. 2011. All rights reserved.
V
Q
003a a d583
003aad581
DS
G
C
C
C
oss
rss
(nC)
iss
(V)
10
60
2
8 of 14