PSMN013-100ES NXP Semiconductors, PSMN013-100ES Datasheet - Page 5

Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C

PSMN013-100ES

Manufacturer Part Number
PSMN013-100ES
Description
Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
6. Characteristics
Table 6.
PSMN013-100ES
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown voltage I
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state resistance V
internal gate resistance (AC)
total gate charge
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
see
I
see
I
see
V
V
V
V
see
V
see
V
see
f = 1 MHz
I
see
I
I
see
I
see
I
see
V
see
V
T
V
R
D
D
D
D
D
D
D
D
D
D
Rev. 3 — 29 September 2011
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
G(ext)
= 25 °C; see
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 0 A; V
= 25 A; V
= 25 A; V
= 25 A; V
Figure 9
Figure
Figure 10
Figure 11
Figure 11
Figure
Figure
Figure
Figure 14
Figure
Figure 13
= 100 V; V
= 100 V; V
= 50 V; see
= 50 V; V
= 50 V; R
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω; T
N-channel 100V 13.9mΩ standard level MOSFET in I2PAK.
DS
10; see
12; see
13; see
13; see
14; see
DS
DS
DS
DS
DS
DS
DS
D
D
D
= 0 V; V
GS
DS
L
DS
= 15 A; T
= 15 A; T
= 15 A; T
= 50 V; V
= 50 V; V
= 50 V; V
= 50 V; V
GS
GS
= V
= V
= V
Figure 15
= 2 Ω; V
GS
GS
Figure
= 0 V; T
= 0 V; f = 1 MHz;
j
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 9
Figure 11
Figure 14
Figure 14
Figure 13
; T
; T
; T
GS
14;
GS
j
j
j
j
j
j
GS
GS
GS
GS
= 10 V
j
= 175 °C;
= 25 °C;
= -55 °C;
= 175 °C;
= 100 °C;
= 25 °C;
j
= 25 °C
j
j
= 25 °C
j
j
= 10 V;
= 125 °C
= 25 °C
= 10 V;
= 10 V;
= 10 V;
= 10 V;
= -55 °C
= 25 °C
PSMN013-100ES
[1]
Min
90
100
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
3
-
-
0.06
10
10
30
-
11
1
59
47.6
13.8
9.2
4.6
17
4.4
3195
221
136
20.7
25
52.5
24
© NXP B.V. 2011. All rights reserved.
Max
-
-
-
4
4.8
100
2
100
100
38.9
25
13.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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