PSMN013-100ES NXP Semiconductors, PSMN013-100ES Datasheet - Page 4

• Manufacturer Part Number: PSMN013-100ES
• Description: Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN013-100ES
Product data sheet
Symbol
R
R
Fig 3.
th(j-mb)
th(j-a)
Z
(K/W)
th (j-mb)
10
10
10
10
-1
-2
-3
-4
1
1e -6
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
δ = 0.5
0.2
0.1
0.05
0.02
s ingle s hot
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
10
-5
10
-4
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 September 2011
10
-3
N-channel 100V 13.9mΩ standard level MOSFET in I2PAK.
10
Conditions
see
vertical in free air
-2
Figure 3
10
-1
PSMN013-100ES
Min
-
-
P
1
t
Typ
0.5
60
p
T
t
© NXP B.V. 2011. All rights reserved.
p
(s )
003a a d575
δ =
-
Max
0.9
T
t
p
t
10
Unit
K/W
K/W
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