PSMN1R7-25YLC NXP Semiconductors, PSMN1R7-25YLC Datasheet - Page 8

Logic level enhancement mode N-channel MOSFET in LFPAK package

PSMN1R7-25YLC

Manufacturer Part Number
PSMN1R7-25YLC
Description
Logic level enhancement mode N-channel MOSFET in LFPAK package
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PSMN1R7-25YLC
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(A)
I
(S )
10
D
10
10
10
10
10
g
200
160
120
fs
80
40
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
20
1
Min
40
Typ
60
Max
2
N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower
V
80
All information provided in this document is subject to legal disclaimers.
003a a f 819
GS
003a a f 818
I
(V)
D
(A)
100
3
Rev. 01 — 2 May 2011
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
GS (th)
(V)
I
D
100
80
60
40
20
3
2
1
0
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics; drain current as a
0
Min (5mA)
Max (1mA)
T
0
1
j
PSMN1R7-25YLC
= 150 °C
I
D
= 5mA
60
2
T
1mA
j
= 25 °C
120
3
© NXP B.V. 2011. All rights reserved.
V
003a a f 817
003a a f 821
T
GS
j
(°C)
(V)
180
4
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