BLF242 NXP Semiconductors, BLF242 Datasheet - Page 3

Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range

BLF242

Manufacturer Part Number
BLF242
Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range
Manufacturer
NXP Semiconductors
Datasheet

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LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Oct 13
V
V
I
P
T
T
R
R
handbook, halfpage
D
stg
j
SYMBOL
SYMBOL
DS
GS
tot
th j-mb
th mb-h
HF-VHF power MOS transistor
(1) Current is this area may be limited by R
(2) T
10
10
(A)
I D
10
mb
1
1
2
1
= 25 C.
(1)
thermal resistance from junction to
mounting base
thermal resistance from mounting base to
heatsink
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
Fig.2 DC SOAR.
10
PARAMETER
PARAMETER
V DS (V)
DSon
.
(2)
MRA918
10
2
3
T
T
T
mb
mb
mb
handbook, halfpage
(1) Continuous operation.
(2) Short-time operation during mismatch.
= 25 C; P
= 25 C; P
P tot
(W)
25 C
20
10
CONDITIONS
CONDITIONS
0
0
tot
tot
Fig.3 Power derating curves.
= 16 W
= 16 W
50
(2)
(1)
MIN.
65
VALUE
100
0.3
11
Product specification
T h ( C)
65
1
16
150
200
MAX.
20
MPG141
BLF242
150
UNIT
K/W
K/W
V
V
A
W
C
C
UNIT

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