BLF242 NXP Semiconductors, BLF242 Datasheet - Page 5

• Manufacturer Part Number: BLF242
• Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2003 Oct 13
handbook, halfpage
handbook, halfpage
R DS (on)
HF-VHF power MOS transistor
V
Fig.4
I
Fig.6
( )
D
(mV/K)
DS
T.C.
= 0.3 A; V
= 10 V.
–2
–4
4
2
0
6
4
2
0
0
0
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
Drain-source on-state resistance as a
function of junction temperature, typical
values.
GS
= 10 V.
100
50
200
100
I D (mA)
T j (
o
C)
MBB778
MBB777
300
150
5
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
DS
GS
(A)
I D
(pF)
1.5
0.5
= 10 V; T
C
= 0; f = 1 MHz.
30
20
10
1
0
0
0
0
Drain current as a function of gate-source
voltage, typical values.
Input and output capacitance as functions
of drain-source voltage, typical values.
j
= 25 C.
10
5
C os
C is
10
20
Product specification
V GS (V)
V DS (V)
BLF242
MGP142
MBB776
15
30