BLF242 NXP Semiconductors, BLF242 Datasheet - Page 4

• Manufacturer Part Number: BLF242
• Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
V
2003 Oct 13
V
I
I
V
g
R
I
C
C
C
j
DSS
GSS
DSX
GS
fs
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
HF-VHF power MOS transistor
SYMBOL
group indicator
GROUP
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
PARAMETER
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
V
V
V
I
I
I
V
V
V
V
D
D
D
GS
GS
GS
GS
GS
GS
GS
= 3 mA; V
= 0.3 A; V
= 0.3 A; V
4
= 0; I
= 0; V
= 20 V; V
= 10 V; V
= 0; V
= 0; V
= 0; V
CONDITIONS
D
GROUP
DS
DS
DS
DS
= 0.1 mA
DS
DS
GS
W
= 28 V
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
O
Q
R
U
P
S
T
V
X
Y
Z
GS
DS
= 10 V
= 10 V
= 1 V
= 10 V
= 0
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
65
2
0.16
MIN.
LIMITS
0.24
3.3
1.2
13
9.4
1.7
TYP. MAX. UNIT
(V)
Product specification
BLF242
10
1
4.5
5
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
V
S
A
pF
pF
pF
A
A