BLF7G15LS-200 NXP Semiconductors, BLF7G15LS-200 Datasheet - Page 3

• Manufacturer Part Number: BLF7G15LS-200
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Test information
BLF7G15LS-200
Product data sheet
7.1 Ruggedness in class-AB operation
7.2 Impedance information
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 DPCH; f
RF performance at V
class-AB production test circuit.
Table 8.
Mode of operation: 1-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 DPCH; f
unless otherwise specified; in a class-AB production test circuit.
The BLF7G15LS-200 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Table 9.
I
Z
Symbol Parameter
I
I
Symbol
P
G
Symbol
f
(MHz)
1480
1560
g
R
RL

ACPR
PAR
Dq
1410
Dq
DSX
GSS
j
S
fs
D
L(AV)
DS(on)
p
= 25
and Z
in
= 1600 mA; main transistor V
= 1600 mA; P
O

C unless otherwise specified.
L
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
defined in
Parameter
output peak-to-average ratio
Characteristics
Functional test information
PAR performance
Typical impedance information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
All information provided in this document is subject to legal disclaimers.
L
1
1
= 150 W (CW); f = 1476 MHz to 1511 MHz.
DS
Figure
= 1473.5 MHz; f
= 1511 MHz; RF performance at V
= 28 V; I
Z
()
0.74 j1.52
0.65 j1.7
0.61 j1.74
S
Rev. 3 — 22 July 2011
1.
…continued
Dq
DS
= 1600 mA; T
= 28 V.
2
= 1478.5 MHz; f
Conditions
P
probability on CCDF
Conditions
V
V
V
V
I
D
L(AV)
GS
DS
GS
DS
GS
= 9.45 A
case
= 10 V
= 10 V; I
= V
= 11 V; V
= V
Conditions
P
P
P
P
= 100 W at 0.01 %
L(AV)
L(AV)
L(AV)
L(AV)
GS(th)
GS(th)
= 25
= 50 W
= 50 W
= 50 W
= 50 W
3
DS
D
= 1508.5 MHz; f
+ 3.75 V;
DS
+ 3.75 V;

C; unless otherwise specified; in a
= 13.5 A
= 28 V; I
BLF7G15LS-200
= 0 V
Z
()
3.5 j1.7
4.0 j0.74
3.8 + j0.5
L
Dq
Min
-
18.3 19.5
-
27
-
Power LDMOS transistor
= 1600 mA; T
Min
42
-
17
0.012 0.048 0.093 
4
Min Typ Max Unit
4.2
DS
= 1513.5 MHz;
Typ
50
8
29
35
= 28 V;
© NXP B.V. 2011. All rights reserved.
Typ
49
-
19.3
4.6
case
Max
-
-
5.5
-
33
Max
-
420
19.7
-
= 25
W
Unit
dB
dB
%
dBc
3 of 11
dB
Unit
A
S

nA
C;