BLF7G15LS-200 NXP Semiconductors, BLF7G15LS-200 Datasheet - Page 4

• Manufacturer Part Number: BLF7G15LS-200
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G15LS-200
Product data sheet
7.3 Graphs
Fig 1.
Fig 2.
(1) gain
(2) efficiency
Definition of transistor impedance
V
One-tone CW power gain and drain efficiency as function of load power;
typical values
DS
= 28 V; I
All information provided in this document is subject to legal disclaimers.
Dq
Gain
(dB)
= 1600 mA; f = 1511 MHz.
22
16
10
Rev. 3 — 22 July 2011
4
0
gate
100
Z
S
(1)
(2)
001aaf059
200
Z
drain
L
P
BLF7G15LS-200
L
014aab253
(W)
300
Power LDMOS transistor
60
40
20
0
(%)
η
© NXP B.V. 2011. All rights reserved.
4 of 11