BLF7G15LS-200 NXP Semiconductors, BLF7G15LS-200 Datasheet - Page 6

• Manufacturer Part Number: BLF7G15LS-200
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G15LS-200
Product data sheet
Fig 7.
BLF7G15L(S)-200
Input Circuit
RO4350 30 Mil
NXP
BLF7G15L(S)-200
Input Circuit
RO4350 30 Mil
NXP
(1) C5 should be mounted under C11.
Rogers RO4350 Printed-Circuit Board (PCB) with 
See
The vias can be as a reference to place components.
The above layout shows the test circuit used to measure devices in production. The RF Power and Bas-Station group can
provide a more appropriate application demonstration for specific customer needs.
Component layout
C1
Table 10
C4
7.4 Test circuit
for list of components. The drawing is not to scale.
C3
Table 10.
See
Component
C1
C2, C7, C10
C3, C4, C5, C6
C8, C9
C11
R1
Figure 7
C8
C9
List of components
for test circuit.
All information provided in this document is subject to legal disclaimers.
R1
Description
multi layer ceramic chip capacitor
multi layer ceramic chip capacitor
multi layer ceramic chip capacitor
multi layer ceramic chip capacitor
electrolytic capacitor
chip resistor
Rev. 3 — 22 July 2011
r
= 3.48 and thickness = 0.765 mm (30 mil).
C10
BLF7G15LS-200
C7
Value
10 pF
47 pF
10 F
36 pF
470 F; 63 V
15 
C2
C5 (1)
Power LDMOS transistor
+
−
C6
BLF7G15L-200
Output Circuit
RO4350 30 Mil
NXP
BLF7G15L-200
Output Circuit
RO4350 30 Mil
NXP
C11
© NXP B.V. 2011. All rights reserved.
Remarks
ATC 800B
ATC 800A
Murata
ATC 800B
Philips 1206
014aab258
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