BLS7G2933S-150 NXP Semiconductors, BLS7G2933S-150 Datasheet - Page 3

• Manufacturer Part Number: BLS7G2933S-150
• Description: 150 W LDMOS power transistor intended for radar applications in the 2
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
7. Application information
BLS7G2933S-150
Product data sheet
Table 6.
T
Table 7.
Mode of operation: pulsed RF; t
T
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
V
G
RL
P
η
P
t
t
DSS
DSX
GSS
r
f
j
case
fs
D
(BR)DSS
GS(th)
L
CC
L(1dB)
droop(pulse)
DS(on)
p
= 25
in
= 25
°
C unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
°
C; unless otherwise specified, in a class-AB production circuit.
Characteristics
Application information
Parameter
output power
supply voltage
power gain
input return loss
output power at 1 dB gain compression
drain efficiency
pulse droop power
rise time
fall time
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 23 February 2011
p
= 300
μ
s;
Conditions
V
V
V
V
V
V
V
V
I
δ
D
GS
DS
GS
GS
DS
GS
DS
GS
= 10 %; RF performance at V
= 6.3 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
GS(th)
GS(th)
LDMOS S-band radar power transistor
D
DS
D
D
= 0.6 mA
+ 3.75 V;
+ 3.75 V;
DS
= 180 mA
= 9 A
BLS7G2933S-150
= 28 V
Conditions Min Typ
P
P
P
P
P
P
P
= 0 V
L
L
L
L
L
L
L
= 150 W
= 150 W
= 150 W
= 150 W
= 150 W
= 150 W
= 150 W
Min
65
1.5
-
29
-
-
-
-
-
11
-
44
-
-
-
DS
= 32 V; I
Typ
-
1.8
-
35
-
12.7
0.085
© NXP B.V. 2011. All rights reserved.
150
-
13.5
−10
170
47
0
20
6
Dq
Max
-
2.3
4.2
-
420
-
0.135 Ω
Max Unit
-
32
-
−5.5 dB
-
-
0.3
50
50
= 100 mA;
3 of 12
W
V
dB
W
%
dB
ns
ns
Unit
V
V
μA
A
nA
S