BLS7G2933S-150 NXP Semiconductors, BLS7G2933S-150 Datasheet - Page 7

• Manufacturer Part Number: BLS7G2933S-150
• Description: 150 W LDMOS power transistor intended for radar applications in the 2
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Test information
BLS7G2933S-150
Product data sheet
Table 9.
See
Component
C1
C2, C8
C3, C9
C4, C5, C6, C7
C10
R1
Fig 7.
Figure
Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with ε
thickness = 0.64 mm.
See
Component layout for application circuit
C5
7.
List of components
Table 9
C1
All information provided in this document is subject to legal disclaimers.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
C2 C3
for list of components.
Rev. 2 — 23 February 2011
C4
R1
LDMOS S-band radar power transistor
Value
10 μF; 20 V
1 nF
100 pF
10 pF
68 μF; 63 V
10 Ω
BLS7G2933S-150
C6
C7
C8 C9
Remarks
ATC 700A or equivalent
ATC 100A or equivalent
ATC 100A or equivalent
SMD 0603
© NXP B.V. 2011. All rights reserved.
001aan033
C10
r
= 6.15 and
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