BLS7G2933S-150 NXP Semiconductors, BLS7G2933S-150 Datasheet - Page 9

• Manufacturer Part Number: BLS7G2933S-150
• Description: 150 W LDMOS power transistor intended for radar applications in the 2
• Manufacturer: NXP Semiconductors

NXP Semiconductors
10. Handling information
11. Abbreviations
12. Revision history
Table 11.
BLS7G2933S-150
Product data sheet
CAUTION
Document ID
BLS7G2933S-150 v.2
Modifications:
BLS7G2933S-150 v.1
Revision history
Table 10.
Acronym
LDMOS
RF
S-band
SMD
VSWR
Release date
20110223
20101112
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
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•
The status of this data sheet has been changed to Product data sheet
Table 7 on page
Abbreviations
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 2 — 23 February 2011
3: Maximum value of RL
Description
Laterally Diffused Metal-Oxide Semiconductor
Radio Frequency
Short wave Band
Surface Mounted Device
Voltage Standing-Wave Ratio
in
Change notice
-
-
has been changed
LDMOS S-band radar power transistor
BLS7G2933S-150
Supersedes
BLS7G2933S-150 v.1
-
© NXP B.V. 2011. All rights reserved.
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