BF1118W NXP Semiconductors, BF1118W Datasheet - Page 2

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode

BF1118W

Manufacturer Part Number
BF1118W
Description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
2. Pinning information
3. Ordering information
BF1118_1118R_1118W_1118WR
Product data sheet
Table 2.
[1]
Table 3.
Pin
BF1118 (SOT143B)
1
2
3
4
BF1118R (SOT143R)
1
2
3
4
BF1118W (SOT343N)
1
2
3
4
BF1118WR (SOT343R)
1
2
3
4
Type number Package
BF1118
BF1118R
BF1118W
BF1118WR
Drain and source are interchangeable.
Description
FET gate; diode anode
diode cathode
source
drain
FET gate; diode anode
diode cathode
source
drain
FET gate; diode anode
diode cathode
source
drain
FET gate; diode anode
diode cathode
source
drain
Pinning
Ordering information
Name Description
-
-
-
-
All information provided in this document is subject to legal disclaimers.
plastic surface-mounted package; 4 leads
plastic surface-mounted package; reverse pinning; 4 leads
plastic surface-mounted package; 4 leads
plastic surface-mounted package; reverse pinning; 4 leads
Rev. 2 — 11 January 2012
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
BF1118(R); BF1118W(R)
Simplified outline
4
3
2
2
4
3
1
1
1
1
3
2
4
3
2
4
Graphic symbol
Silicon RF switches
© NXP B.V. 2012. All rights reserved.
4
1
3
2
4
1
3
2
001aai042
001aai043
001aai042
001aai043
Version
SOT143B
SOT143R
SOT343N
SOT343R
3
2
4
1
3
2
4
1
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