BF1118W NXP Semiconductors, BF1118W Datasheet - Page 9

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode

BF1118W

Manufacturer Part Number
BF1118W
Description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
Fig 7.
BF1118_1118R_1118W_1118WR
Product data sheet
Plastic surface-mounted package; reverse pinning; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Package outline SOT343R
VERSION
OUTLINE
SOT343R
1.1
0.8
A
w
M
max
0.1
A 1
B
3
2
0.4
0.3
b p
y
b p
IEC
b 1
0.7
0.5
e 1
D
e
0.25
0.10
c
b 1
All information provided in this document is subject to legal disclaimers.
JEDEC
2.2
1.8
D
4
1
REFERENCES
0
Rev. 2 — 11 January 2012
1.35
1.15
E
B
1.3
e
scale
EIAJ
1
1.15
e 1
BF1118(R); BF1118W(R)
A
2.2
2.0
H E
A 1
2 mm
0.45
0.15
L p
0.23
0.13
H E
Q
E
detail X
PROJECTION
0.2
v
EUROPEAN
L p
0.2
w
A
Q
c
Silicon RF switches
0.1
y
© NXP B.V. 2012. All rights reserved.
v
X
ISSUE DATE
M
97-05-21
06-03-16
A
SOT343R
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