BF1118W NXP Semiconductors, BF1118W Datasheet - Page 4

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode

BF1118W

Manufacturer Part Number
BF1118W
Description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
7. Static characteristics
Table 7.
T
8. Dynamic characteristics
Table 8.
Common cathode; T
[1]
[3]
BF1118_1118R_1118W_1118WR
Product data sheet
[2]
Symbol
FET
V
V
I
I
R
Diode
V
I
Symbol
FET and diode
L
ISL
R
C
C
Diode
C
r
DSX
GSS
R
D
j
ins(on)
(BR)GSS
GS(p)
F
DSon
DSon
i
o
d
= 25
off
I
C
Guaranteed on AQL basis; inspection level S4, AQL 1.0.
F
i
= diode forward current.
is the series connection of C
C unless otherwise specified.
Parameter
on-state insertion loss
off-state isolation
drain-source on-state resistance
input capacitance
output capacitance
diode capacitance
diode forward resistance
Static characteristics
Dynamic characteristics
Parameter
gate-source breakdown voltage
gate-source pinch-off voltage
drain cut-off current
gate leakage current
drain-source on-state resistance
forward voltage
reverse current
amb
= 25
C.
GS
and C
GK
; C
All information provided in this document is subject to legal disclaimers.
o
is the series connection of C
Rev. 2 — 11 January 2012
Conditions
V
V
V
f = 1 MHz
f = 1 MHz
f = 1 MHz; V
I
F
SK
SK
KS
R
R
R
R
R
R
V
V
V
V
= 2 mA; f = 100 MHz
Conditions
V
V
V
V
V
I
V
V
SK
SK
SK
SK
S
S
S
S
S
S
F
= V
= V
= 0 V; I
DS
DS
GS
GS
GS
R
R
= R
= R
= R
= R
= R
= R
= 10 mA
= V
= V
= V
= V
= 25 V
= 20 V; T
DK
DK
= 0 V; I
= 1 V; I
= 3.3 V; V
= 3.3 V; V
= 0 V; I
L
L
L
L
L
L
DK
DK
DK
DK
= 0 V; I
= 50 ; f  1 GHz
= 50 ; f = 1 GHz
= 75 ; f  1 GHz
= 3.3 V; I
= 50 ; f  1 GHz
= 50 ; f = 1 GHz
= 75 ; f  1 GHz
D
R
= 3.3 V; I
= 0 V; I
= 3.3 V; I
= 0 V; I
= 1 mA
= 0 V
GS
D
D
amb
BF1118(R); BF1118W(R)
= 20 A
= 1 mA
F
= 0.1 mA
DS
DS
= 0 mA
F
= 75 C
F
F
GD
= 1 mA
= 0 mA
= 0 mA
F
F
= 1 V
= 0 V
and C
= 1 mA
= 1 mA
GK
.
[1]
[2]
[2]
[3]
Min
7
-
-
-
-
-
-
-
Min
-
-
-
30
-
30
-
-
-
-
-
-
-
Typ
-
2
-
-
15
-
-
-
Silicon RF switches
Typ
-
1.5
-
-
35
-
15
1
0.65
1
0.65
1.1
-
© NXP B.V. 2012. All rights reserved.
Max
-
2.44
16
100
23.3
1
50
1
Max
2.5
-
2.5
-
-
-
23.3
-
0.9
-
0.9
-
0.9
Unit
V
V
A
nA
V
nA
A
Unit
dB
dB
dB
dB
dB
dB
pF
pF
pF
pF
pF
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