BF1211WR NXP Semiconductors, BF1211WR Datasheet - Page 2

• Manufacturer Part Number: BF1211WR
• Description: Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
FEATURES
 Short channel transistor with high forward transfer
 Low noise gain controlled amplifier
 Excellent low frequency noise performance
 Partly internal self-biasing circuit to ensure good
APPLICATIONS
 Gain controlled low noise VHF and UHF amplifiers for
DESCRIPTION
Enhancement type N-channel field-effect transistor with
source and substrate interconnected. Integrated diodes
between gates and source protect against excessive input
voltage surges. The BF1211, BF1211R and BF1211WR
are encapsulated in the SOT143B, SOT143R and
SOT343R plastic packages respectively.
QUICK REFERENCE DATA
2003 Dec 16
V
I
P
y
C
C
F
X
T
SYMBOL
D
admittance to input capacitance ratio
cross-modulation performance during AGC and good
DC stabilization.
5 V digital and analog television tuner applications.
j
DS
tot
mod
N-channel dual-gate MOS-FETs
ig1-ss
rss
fs
Fig.2
BF1211R marking code: LHp

handbook, 2 columns
Simplified outline (SOT143R).
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
junction temperature
3
2
Top view
PARAMETER
MSB035
4
1
f = 400 MHz
input level for k = 1% at
f = 1 MHz
40 dB AGC
CONDITIONS
2
PINNING
handbook, halfpage
Fig.1
Fig.3
BF1211WR marking code: MK
BF1211 marking code: LFp
handbook, 2 columns
Simplified outline (SOT143B).
Simplified outline (SOT343R).
PIN
1
2
3
4



25



100

Top view
1
4
MIN.
3
2
Top view
BF1211; BF1211R;



30
2.1
15
0.9
105

source
drain
gate 2
gate 1
TYP.
MSB842
MSB014
4
1
Product specification
DESCRIPTION
3
2
BF1211WR
6
30
180
40
2.6
30
1.6

150
MAX.
V
mA
mW
mS
pF
fF
dB
dBV
C
UNIT