BF1211WR NXP Semiconductors, BF1211WR Datasheet - Page 6

• Manufacturer Part Number: BF1211WR
• Description: Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2003 Dec 16
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
Fig.7
V
(1) V
(2) V
(3) V
V
(1) V
(2) V
(3) V
(μA)
(mA)
DS
I G1
DS
I D
Fig.5 Transfer characteristics; typical values.
100
= 5 V; T
= 5 V; T
25
20
15
10
80
60
40
20
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
5
0
0
0
0
Gate 1 current as a function of gate 1
voltage; typical values.
= 4 V.
= 3.5 V.
= 3 V.
= 4 V.
= 3.5 V.
= 3 V.
j
j
= 25 C.
= 25 C.
0.5
0.5
(4) V
(5) V
(6) V
(4) V
(5) V
(6) V
1
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
(1)
(2)
(3)
(4)
1
= 2.5 V.
= 2 V.
= 1.5 V.
= 2.5 V.
= 2 V.
= 1.5 V.
1.5
1.5
(5)
(6)
(7)
(1)
(2)
(3)
(7) V
(7) V
2
V G1-S (V)
V G1-S (V)
MDB829
MDB831
G2-S
G2-S
(4)
(5)
(6)
(7)
2.5
= 1 V.
= 1 V.
2
6
handbook, halfpage
handbook, halfpage
Fig.8
V
(1) V
(2) V
(3) V
V
(1) V
(2) V
G2-S
DS
(mS)
(mA)
y fs
I D
= 5 V; T
Fig.6 Output characteristics; typical values.
24
16
40
30
20
10
8
0
G1-S
G1-S
G1-S
0
G2-S
G2-S
= 4 V; T
BF1211; BF1211R; BF1211WR
0
0
Forward transfer admittance as a function
of drain current; typical values.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 4 V.
= 3.5 V.
j
= 25 C.
j
= 25 C.
6
(6)
(4) V
(5) V
(6) V
(3) V
(4) V
2
12
G1-S
G1-S
G1-S
G2-S
G2-S
= 1.2 V.
= 1.1 V.
= 1 V.
= 3 V.
= 2.5 V.
(5)
18
4
Product specification
V DS (V)
(7) V
(8) V
(5) V
(6) V
24
(4)
I D (mA)
(1)
(2)
(3)
MDB832
MDB830
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
G1-S
G1-S
G2-S
G2-S
30
= 0.9 V.
= 0.8 V.
= 2 V.
= 1.5 V.
6