BF1211WR NXP Semiconductors, BF1211WR Datasheet - Page 7
![Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package](/photos/41/53/415378/sot343r_3d_sml.gif)
BF1211WR
Manufacturer Part Number
BF1211WR
Description
Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package
Manufacturer
NXP Semiconductors
Datasheet
1.BF1211.pdf
(16 pages)
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NXP Semiconductors
2003 Dec 16
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
Fig.9
Fig.11 Drain current as a function of gate 1 (V
V
T
V
(1) R
(2) R
(3) R
(mA)
(mA)
j
DS
G2-S
I D
I D
= 25 C.
= 5 V; V
20
16
12
20
16
12
8
4
0
= 4 V; T
8
4
0
G1
G1
G1
0
0
= 47 k.
= 56 k.
= 68 k.
Drain current as a function of gate 1 current;
typical values.
and drain supply voltage; typical values.
G2-S
j
= 25 C; R
= 4 V.
10
(4) R
(5) R
(6) R
2
G1
20
connected to V
G1
G1
G1
= 75 k.
= 82 k.
= 100 k.
30
4
(1)
GG
V GG = V DS (V)
; see Fig.21.
(7) R
40
I G1 (μA)
(2)
(3)
(4)
(5)
(6)
(7)
MDB835
MDB833
G1
= 120 k.
50
6
GG
)
7
handbook, halfpage
handbook, halfpage
V
R
Fig.10 Drain current as a function of gate 1 supply
Fig.12 Drain current as a function of gate 2
V
(1) V
(2) V
(3) V
(mA)
(mA)
DS
G1
DS
I D
I D
= 5 V; V
= 75 k (connected to V
= 5 V; T
16
12
20
16
12
8
4
0
8
4
0
GG
GG
GG
BF1211; BF1211R; BF1211WR
0
0
= 5 V.
= 4.5 V.
= 4 V.
voltage (V
voltage; typical values.
G2-S
j
= 25 C; R
= 4 V; T
1
GG
G1
j
2
= 25 C.
= 75 k (connected to V
); typical values.
2
GG
); see Fig.21.
(4) V
(5) V
3
4
GG
GG
Product specification
= 3.5 V.
= 3 V.
V G2-S (V)
(1)
(2)
(3)
(4)
(5)
4
V GG (V)
GG
MDB834
MDB836
); see Fig.21.
5
6