BF1211WR NXP Semiconductors, BF1211WR Datasheet - Page 3
![Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package](/photos/41/53/415378/sot343r_3d_sml.gif)
BF1211WR
Manufacturer Part Number
BF1211WR
Description
Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package
Manufacturer
NXP Semiconductors
Datasheet
1.BF1211.pdf
(16 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BF1211WR
Manufacturer:
NXP
Quantity:
51 000
Company:
Part Number:
BF1211WR
Manufacturer:
BROADCOM
Quantity:
120
Part Number:
BF1211WR
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BF1211WR+115
Manufacturer:
NXP
Quantity:
1 100
NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. T
THERMAL CHARACTERISTICS
2003 Dec 16
BF1211
BF1211R
BF1211WR
V
I
I
I
P
T
T
R
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
SYMBOL
D
G1
G2
SYMBOL
TYPE NUMBER
stg
j
DS
tot
N-channel dual-gate MOS-FETs
th(j-s)
s
is the temperature of the soldering point of the source lead.
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
BF1211; BF1211R
BF1211WR
BF1211; BF1211R
BF1211WR
NAME
PARAMETER
plastic surface mounted package; 4 leads
plastic surface mounted package; reverse pinning; 4 leads
plastic surface mounted package; reverse pinning; 4 leads
PARAMETER
CAUTION
T
T
s
s
116 C; note 1
122 C; note 1
3
DESCRIPTION
CONDITIONS
PACKAGE
BF1211; BF1211R; BF1211WR
65
MIN.
VALUE
185
155
6
30
10
10
180
180
+150
150
Product specification
MAX.
VERSION
SOT143B
SOT143R
SOT343R
UNIT
K/W
K/W
V
mA
mA
mA
mW
mW
C
C
UNIT