BF1212R NXP Semiconductors, BF1212R Datasheet - Page 3

• Manufacturer Part Number: BF1212R
• Description: Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. T
THERMAL CHARACTERISTICS
2003 Nov 14
BF1212
BF1212R
BF1212WR
V
I
I
I
P
T
T
R
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
SYMBOL
D
G1
G2
SYMBOL
TYPE NUMBER
stg
j
DS
tot
N-channel dual-gate MOS-FETs
th j-s
s
is the temperature of the soldering point of the source lead.
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
BF1212; BF1212R
BF1212WR
BF1212; BF1212R
BF1212WR
NAME
PARAMETER



plastic surface mounted package; 4 leads
plastic surface mounted package; reverse pinning; 4 leads
plastic surface mounted package; reverse pinning; 4 leads
PARAMETER
CAUTION
T
T
s
s
 116 C; note 1
 122 C; note 1
3
DESCRIPTION
CONDITIONS
PACKAGE
BF1212; BF1212R; BF1212WR






65

MIN.
VALUE
185
155
6
30
10
10
180
180
+150
150
Product specification
MAX.
VERSION
SOT143B
SOT143R
SOT343R
UNIT
K/W
K/W
V
mA
mA
mA
mW
mW
C
C
UNIT