BF1212R NXP Semiconductors, BF1212R Datasheet - Page 8

• Manufacturer Part Number: BF1212R
• Description: Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2003 Nov 14
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
Fig.13 Gate 1 current as a function of gate 2
V
see Fig.21; f= 50 MHz; f
Fig.15 Unwanted voltage for 1% cross-modulation
(1) V
(2) V
(3) V
(dBμV)
V unw
DS
(μA)
I G1
120
110
100
= 5 V; V
30
20
10
90
80
0
GG
GG
GG
0
0
= 5 V.
= 4.5 V.
= 4 V.
voltage; typical values.
as a function of gain reduction; typical
values.
GG
= 5 V; R
10
(4) V
(5) V
G1
unw
2
= 150 k (connected to V
GG
GG
= 60 MHz; T
20
= 3.5 V.
= 3 V.
30
gain reduction (dB)
amb
4
V
R
(connected to V
see Fig.21.
= 25 C.
DS
G1
V G2-S (V)
= 5 V; T
= 150 k
40
(1)
(2)
(3)
(4)
(5)
GG
MLE241
MLE243
);
j
= 25 C.
50
GG
6
);
8
handbook, halfpage
handbook, halfpage
reduction
gain
V
see Fig.21; f = 50 MHz; T
Fig.14 Typical gain reduction as a function of AGC
V
see Fig.21; f= 50 MHz; T
Fig.16 Drain current as a function of gain
(dB)
DS
DS
(mA)
I D
−20
−40
−60
= 5 V; V
= 5 V; V
16
12
BF1212; BF1212R; BF1212WR
0
8
4
0
0
0
voltage.
reduction; typical values.
GG
GG
= 5 V; R
= 5 V; R
10
1
G1
G1
amb
amb
= 150 k(connected to V
= 150 k (connected to V
20
= 25 C.
= 25 C.
2
30
gain reduction (dB)
Product specification
3
40
V AGC (V)
GG
GG
MLE242
MLE244
);
);
50
4