BF1212R NXP Semiconductors, BF1212R Datasheet - Page 5

• Manufacturer Part Number: BF1212R
• Description: Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
DYNAMIC CHARACTERISTICS
Common source; T
Note
1. Measured in test circuit Fig.21.
2003 Nov 14
y
C
C
C
C
F
G
X
SYMBOL
mod
N-channel dual-gate MOS-FETs
ig1-ss
ig2-ss
oss
rss
tr
fs

forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance f = 1 MHz
noise figure
power gain
cross-modulation
amb
PARAMETER
= 25 C; V
G2-S
= 4 V; V
pulsed; T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 11 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
f = 200 MHz; G
G
f = 400 MHz; G
G
f = 800 MHz; G
G
input level for k = 1%; f
f
unw
L
L
L
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
DS
= 0.5 mS; B
= 1 mS; B
= 1 mS; B
= 60 MHz; note 1
= 5 V; I
j
= 25 C
D
CONDITIONS
L
L
S
= B
= B
= 12 mA; unless otherwise specified.
S
S
S
L
S
S
= 20 mS; B
5
= Y
= Y
= B
= 2 mS; B
= 2 mS; B
= 3.3 mS; B
L (opt)
L (opt)
S (opt)
S (opt)
L (opt)
w
= 50 MHz;
BF1212; BF1212R; BF1212WR
S
S
S
= 0
= B
= B
S
= B
S (opt)
S (opt)
S (opt)
;
;
;
28










90

100
MIN.
33
1.7
1.1
0.9
15
4
0.9
1.1
35
30
25

89
104
TYP.
Product specification
43
2.2


30

1.6
1.8






MAX.
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBV
dBV
dBV
UNIT