MIEB100W1200TEH IXYS, MIEB100W1200TEH Datasheet
MIEB100W1200TEH
Specifications of MIEB100W1200TEH
Related parts for MIEB100W1200TEH
MIEB100W1200TEH Summary of contents
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... Application: • AC motor drives • Solar inverter • Medical equipment • Uninterruptible power supply • Air-conditioning systems • Welding equipment • Switched-mode and resonant-mode power supplies MIEB100W1200TEH V = 1200 V CES I = 183 A C25 V = 1.8 V CE(sat) 16, 17, 18 Pin configuration see outlines. 13, 14, 15 Package: • ...
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... inductive load V = 600 100 ± (per diode MIEB100W1200TEH Ratings min. typ. max. Unit = 25°C 1200 ±20 ±30 = 25°C 183 = 80°C 128 = 25°C 630 = 25°C 1.8 2.2 = 125°C 2.0 2.4 = 25° 25° ...
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... Curves are measured on modul level except Fig Fig. 17 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Conditions T C Conditions I < 1 mA; 50/ min ISOL with heatsink compound T MIEB100W1200TEH Ratings min. typ. max. = 25°C 4.75 5.0 5.25 3510 Ratings min. typ. max. ...
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... 13, 14, 15 Marking on Product Delivering Mode Base Qty Ordering Code MIEB100W1200TEH MIEB100W1200TEH XXX XX-XXXXX Logo Part name Date Code Part number M = Module I = IGBT E = NPT B = 2nd Generation 100 = Current Rating [ Six-Pack 1200 = Reverse Voltage [ NTC EH = E3-Pack Dimensions 0.0394“) ...
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... [ns] [mJ 160 200 Fig. 6 Typ. turn-off energy & switching times MIEB100W1200TEH 125° [V] CE Fig. 2 Typ. output characteristics I = 100 600 200 400 ...
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... IXYS All rights reserved 250 d(on) 200 8 150 [ns] [mJ] 100 Fig. 8 Typ. turn off energy & switching times MIEB100W1200TEH E off I = 100 600 ± 125° [Ω] G versus gate resistor 1200 ...
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... V = 600 125°C VJ 0.0 0 0.1 Fig. 12 Typ. transient thermal impedance 100000 10000 R 1000 [Ω] 100 10 0 Fig.13 Typ. NTC resistance vs. temperature MIEB100W1200TEH 22 Ω 10 Ω = 100 600 125° 1500 2000 2500 di /dt [A/µs] F IGBT FRD ...
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... A 1800 2000 2200 vs. di/ 125° 600 V R 200 A E rec [mJ] 100 1800 2000 2200 versus di/dt rr MIEB100W1200TEH 160 T = 125°C VJ 140 V = 600 V R 120 100 1000 1200 1400 1600 1800 di /dt [A/µs] F Fig. 15 Typ. peak reverse current I ...