MIEB100W1200TEH IXYS, MIEB100W1200TEH Datasheet

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MIEB100W1200TEH

Manufacturer Part Number
MIEB100W1200TEH
Description
Six-Pack IGBT Modules in E1, E2 and E3-Pack
Manufacturer
IXYS
Datasheet

Specifications of MIEB100W1200TEH

Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
183
Ic80, Tc = 80°c, Igbt, (a)
128
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
1.8
Eoff, Typ, Tj = 125°c, Igbt, (mj)
9.7
Rthjc, Max, Igbt, (k/w)
0.20
If25, Tc = 25°c, Diode, (a)
135
If80, Tc = 80°c, Diode, (a)
90
Package Style
E3-Pack
Six-Pack
SPT
Part name
MIEB100W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
Features:
• SPT
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient
• MOS input, voltage controlled
• SONIC™ free wheeling diode
• solderable pins for PCB mounting
• package with copper base plate
- fast and soft revere recovery
- low operation forward voltage
for easy parallelling
+
IGBT technology
20
19
+
IGBT
30, 31, 32
33, 34, 35
NTC
(Marking on product)
1
2
3
4
T1
T2
D1
D2
27
28
29
5
7
8
6
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
T3
T4
resonant-mode power supplies
D3
D4
24
25
26
10
11
12
9
T5
T6
D5
D6
21
22
23
16, 17, 18
13, 14, 15
MIEB100W1200TEH
Package:
• "E3-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
V
I
V
Pin configuration see outlines.
C25
CES
CE(sat)
= 1200 V
= 1.8 V
= 183 A
20101111d
E72873
1 - 8

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MIEB100W1200TEH Summary of contents

Page 1

... Application: • AC motor drives • Solar inverter • Medical equipment • Uninterruptible power supply • Air-conditioning systems • Welding equipment • Switched-mode and resonant-mode power supplies MIEB100W1200TEH V = 1200 V CES I = 183 A C25 V = 1.8 V CE(sat) 16, 17, 18 Pin configuration see outlines. 13, 14, 15 Package: • ...

Page 2

... inductive load V = 600 100 ± (per diode MIEB100W1200TEH Ratings min. typ. max. Unit = 25°C 1200 ±20 ±30 = 25°C 183 = 80°C 128 = 25°C 630 = 25°C 1.8 2.2 = 125°C 2.0 2.4 = 25° 25° ...

Page 3

... Curves are measured on modul level except Fig Fig. 17 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Conditions T C Conditions I < 1 mA; 50/ min ISOL with heatsink compound T MIEB100W1200TEH Ratings min. typ. max. = 25°C 4.75 5.0 5.25 3510 Ratings min. typ. max. ...

Page 4

... 13, 14, 15 Marking on Product Delivering Mode Base Qty Ordering Code MIEB100W1200TEH MIEB100W1200TEH XXX XX-XXXXX Logo Part name Date Code Part number M = Module I = IGBT E = NPT B = 2nd Generation 100 = Current Rating [ Six-Pack 1200 = Reverse Voltage [ NTC EH = E3-Pack Dimensions 0.0394“) ...

Page 5

... [ns] [mJ 160 200 Fig. 6 Typ. turn-off energy & switching times MIEB100W1200TEH 125° [V] CE Fig. 2 Typ. output characteristics I = 100 600 200 400 ...

Page 6

... IXYS All rights reserved 250 d(on) 200 8 150 [ns] [mJ] 100 Fig. 8 Typ. turn off energy & switching times MIEB100W1200TEH E off I = 100 600 ± 125° [Ω] G versus gate resistor 1200 ...

Page 7

... V = 600 125°C VJ 0.0 0 0.1 Fig. 12 Typ. transient thermal impedance 100000 10000 R 1000 [Ω] 100 10 0 Fig.13 Typ. NTC resistance vs. temperature MIEB100W1200TEH 22 Ω 10 Ω = 100 600 125° 1500 2000 2500 di /dt [A/µs] F IGBT FRD ...

Page 8

... A 1800 2000 2200 vs. di/ 125° 600 V R 200 A E rec [mJ] 100 1800 2000 2200 versus di/dt rr MIEB100W1200TEH 160 T = 125°C VJ 140 V = 600 V R 120 100 1000 1200 1400 1600 1800 di /dt [A/µs] F Fig. 15 Typ. peak reverse current I ...

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