MIEB100W1200TEH IXYS, MIEB100W1200TEH Datasheet - Page 6

• Manufacturer Part Number: MIEB100W1200TEH
• Description: Six-Pack IGBT Modules in E1, E2 and E3-Pack
• Manufacturer: IXYS

Specifications of MIEB100W1200TEH

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 183
• Ic80, Tc = 80°c, Igbt, (a): 128
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.8
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 9.7
• Rthjc, Max, Igbt, (k/w): 0.20
• If25, Tc = 25°c, Diode, (a): 135
• If80, Tc = 80°c, Diode, (a): 90
• Package Style: E3-Pack

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[mJ]
Transistor T1 - T6
E
25
20
15
10
5
0
0
E
Fig. 7 Typ. turn on energy & switching times
on
I
V
V
T
C
VJ
CE
GE
E
=
rec(off)
= 125°C
5
= 600 V
= ±15 V
100 A
versus gate resistor
10
15
R
G
[Ω]
20
25
30
t
d(on)
t
r
35
250
200
150
100
50
0
[ns]
t
[mJ]
E
12
10
8
6
4
2
0
0
Fig. 8 Typ. turn off energy & switching times
E
I
V
V
T
C
off
VJ
CE
GE
=
= 125°C
= 600 V
= ±15 V
5
100 A
versus gate resistor
10
MIEB100W1200TEH
15
R
G
[Ω]
20
25
30
t
d(off)
t
f
35
1200
1000
800
600
400
200
0
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