MIEB100W1200TEH IXYS, MIEB100W1200TEH Datasheet - Page 3
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MIEB100W1200TEH
Manufacturer Part Number
MIEB100W1200TEH
Description
Six-Pack IGBT Modules in E1, E2 and E3-Pack
Manufacturer
IXYS
Datasheet
1.MIEB100W1200TEH.pdf
(8 pages)
Specifications of MIEB100W1200TEH
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
183
Ic80, Tc = 80°c, Igbt, (a)
128
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
1.8
Eoff, Typ, Tj = 125°c, Igbt, (mj)
9.7
Rthjc, Max, Igbt, (k/w)
0.20
If25, Tc = 25°c, Diode, (a)
135
If80, Tc = 80°c, Diode, (a)
90
Package Style
E3-Pack
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
Module
Symbol
T
T
T
V
CTI
M
R
d
d
R
Weight
V
Curves are measured on modul level except Fig. 14 to Fig. 17
Temperature Sensor NTC
Symbol
R
B
VJ
VJM
stg
S
A
ISOL
pin to chip
thCH
25
25/50
d
CE
= V
CE(sat)
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting torque (M5)
see
creep distance on surface
strike distance through air
thermal resistance case to heatsink
Definitions
resistance
+ 2x R
pin to chip
· I
C
Conditions
Conditions
I
with heatsink compound
ISOL
< 1 mA; 50/60 Hz
t = 1 min
t = 1 s
T
T
C
C
MIEB100W1200TEH
= 25°C unless otherwise stated
= 25°C
min.
min.
12.7
4.75
-40
-40
9.6
3
3510
Ratings
typ.
Ratings
typ.
300
5.0
1.8
0.1
max.
max.
3000
3600
5.25
125
150
125
200
6
20101111d
3 - 8
Unit
Unit
K/W
mm
mm
mW
Nm
kW
V~
V~
°C
°C
°C
K
g