MIEB100W1200TEH IXYS, MIEB100W1200TEH Datasheet - Page 5
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MIEB100W1200TEH
Manufacturer Part Number
MIEB100W1200TEH
Description
Six-Pack IGBT Modules in E1, E2 and E3-Pack
Manufacturer
IXYS
Datasheet
1.MIEB100W1200TEH.pdf
(8 pages)
Specifications of MIEB100W1200TEH
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
183
Ic80, Tc = 80°c, Igbt, (a)
128
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
1.8
Eoff, Typ, Tj = 125°c, Igbt, (mj)
9.7
Rthjc, Max, Igbt, (k/w)
0.20
If25, Tc = 25°c, Diode, (a)
135
If80, Tc = 80°c, Diode, (a)
90
Package Style
E3-Pack
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[A]
[A]
[mJ]
Transistor T1 - T6
I
I
C
C
E
300
240
180
120
250
200
150
100
60
50
40
30
20
10
0
0
0
0
4
Fig. 3 Typ. tranfer characteristics
Fig. 1 Typ. output characteristics
0
Fig. 5 Typ. turn-on energy & switching times
E
R
V
V
T
rec(off)
VJ
V
CE
GE
G
GE
=
= 125°C
5
= 600 V
= ±15 V
E
= 15 V
on
10 Ω
40
x 5
versus collector current
1
6
T
VJ
T
= 25°C
VJ
7
80
= 125°C
V
2
V
GE
CE
8
I
C
[V]
[V]
T
120
[A]
VJ
9
= 125°C
3
T
VJ
10
= 25°C
160
11
4
12
200
t
t
d(on)
r
13
5
160
140
120
100
80
60
40
20
0
[ns]
t
V
[V]
[mJ]
[A]
GE
I
E
C
300
240
180
120
60
20
15
10
32
28
24
20
16
12
Fig. 6 Typ. turn-off energy & switching times
0
5
0
8
4
0
0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
E
I
V
C
T
off
CE
VJ
= 125°C
versus collector current
= 100 A
= 600 V
40
200
1
R
V
V
T
VJ
G
CE
GE
=
= 125°C
= 600 V
= ±15 V
MIEB100W1200TEH
80
10 Ω
V
400
GE
2
I
Q
C
= 15 V
V
G
17 V
19 V
[A]
CE
[nC]
120
[V]
600
3
160
800
4
200
t
13 V
11 V
t
d(off)
9 V
f
1000
5
550
500
450
400
350
300
250
200
150
20101111d
[ns]
5 - 8
t