MIEB100W1200TEH IXYS, MIEB100W1200TEH Datasheet - Page 5

• Manufacturer Part Number: MIEB100W1200TEH
• Description: Six-Pack IGBT Modules in E1, E2 and E3-Pack
• Manufacturer: IXYS

Specifications of MIEB100W1200TEH

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 183
• Ic80, Tc = 80°c, Igbt, (a): 128
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.8
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 9.7
• Rthjc, Max, Igbt, (k/w): 0.20
• If25, Tc = 25°c, Diode, (a): 135
• If80, Tc = 80°c, Diode, (a): 90
• Package Style: E3-Pack

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[A]
[A]
[mJ]
Transistor T1 - T6
I
I
C
C
E
300
240
180
120
250
200
150
100
60
50
40
30
20
10
0
0
0
0
4
Fig. 3 Typ. tranfer characteristics
Fig. 1 Typ. output characteristics
0
Fig. 5 Typ. turn-on energy & switching times
E
R
V
V
T
rec(off)
VJ
V
CE
GE
G
GE
=
= 125°C
5
= 600 V
= ±15 V
E
= 15 V
on
10 Ω
40
x 5
versus collector current
1
6
T
VJ
T
= 25°C
VJ
7
80
= 125°C
V
2
V
GE
CE
8
I
C
[V]
[V]
T
120
[A]
VJ
9
= 125°C
3
T
VJ
10
= 25°C
160
11
4
12
200
t
t
d(on)
r
13
5
160
140
120
100
80
60
40
20
0
[ns]
t
V
[V]
[mJ]
[A]
GE
I
E
C
300
240
180
120
60
20
15
10
32
28
24
20
16
12
Fig. 6 Typ. turn-off energy & switching times
0
5
0
8
4
0
0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
E
I
V
C
T
off
CE
VJ
= 125°C
versus collector current
= 100 A
= 600 V
40
200
1
R
V
V
T
VJ
G
CE
GE
=
= 125°C
= 600 V
= ±15 V
MIEB100W1200TEH
80
10 Ω
V
400
GE
2
I
Q
C
= 15 V
V
G
17 V
19 V
[A]
CE
[nC]
120
[V]
600
3
160
800
4
200
t
13 V
11 V
t
d(off)
9 V
f
1000
5
550
500
450
400
350
300
250
200
150
20101111d
[ns]
5 - 8
t