MIEB101W1200EH IXYS, MIEB101W1200EH Datasheet
MIEB101W1200EH
Specifications of MIEB101W1200EH
Related parts for MIEB101W1200EH
MIEB101W1200EH Summary of contents
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... Six-Pack SPT IGBT + Part name (Marking on product) MIEB101W1200EH 13 14, 20 Features: • SPT IGBT technology + • low saturation voltage • low switching losses • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • ...
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... I max. reverse recovery current rr t reverse recovery time rec R thermal resistance junction to case thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Conditions T VJ continuous transient 100 A ...
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... CE(sat) pin to chip C Curves are measured on modul level except Fig Fig. 17 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Conditions I < 1 mA; 50/ min ISOL with heatsink compound ...
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... Marking on Product Delivering Mode Base Qty Ordering Code MIEB101W1200EH MIEB 101W1200EH 2D Data Matrix FOSS-ID 6 digits XXX XX-XXXXX YYCWx Logo Part name Date Code Part number M = Module I = IGBT E = SPT B = 2nd Generation 101 = Current Rating [ Six-Pack ...
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... I [A] C Fig. 5 Typ. turn-on energy & switching times versus collector current IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 300 250 200 I 150 C = 125°C ...
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... E rec(off [Ω] G Fig. 7 Typ. turn-on energy and switching times versus gate resistor IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 200 (on 150 8 E 100 ...
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... I [A] F Fig. 11 Typ. reverse recovery characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 300 = 25°C 250 200 125° 150 [A] ...
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... F Fig. 16 Typ. recovery time t IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 200 [A] 100 1800 2000 2200 vs. di/ 125°C ...