MIEB101W1200EH IXYS, MIEB101W1200EH Datasheet - Page 2

• Manufacturer Part Number: MIEB101W1200EH
• Description: Six-Pack IGBT Modules in E1, E2 and E3-Pack
• Manufacturer: IXYS

Specifications of MIEB101W1200EH

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 183
• Ic80, Tc = 80°c, Igbt, (a): 128
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.8
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 9.7
• Rthjc, Max, Igbt, (k/w): 0.2
• If25, Tc = 25°c, Diode, (a): 170
• If80, Tc = 80°c, Diode, (a): 110

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Symbol
V
V
V
I
I
P
V
V
I
I
C
Q
t
t
t
t
E
E
E
RBSOA
SCSOA
t
R
Symbol
V
I
I
V
I
t
Q
E
R
Ouput Inverter T1 - T6
C25
C80
CES
GES
d(on)
r
d(off)
f
SC
Output Inverter D1 - D6
F25
F80
rr
rr
GES
GEM
GE(th)
CES
tot
CE(sat)
ies
on
off
rec(off)
thJC
RRM
F
rec
G(on)
thJC
rr
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
(on chip level) 
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
Definitions
max. repetitve reverse voltage
forward current
forward voltage
(on chip level) 
max. reverse recovery current
reverse recovery time
thermal resistance junction to case
Conditions
continuous
transient
I
I
V
V
V
V
inductive load
V
V
L
V
V
R
(per IGBT)
Conditions
I
inductive load
V
V
L
(per diode)
C
C
F
S
GE
S
CE
GE
CE
CE
CE
GE
CE
GE
G
CE
= 100 A; V
= 4 mA; V
= 100 A; V
= 70 nH
= 70 nH
= 3.9 W; non-repetitive
= V
= ±20 V
= 25 V; V
= 600 V; V
= 600 V; I
= ±15 V; R
= ±15 V; R
= 900 V; V
= 600 V; I
= ±15 V; R
CES
; V
GE
GE
GE
GE
GE
C
C
GE
GE
G
= V
G
G
= 0 V
= 100 A
= 0 V
= 15 V
= 100 A
= 0 V; f = 1 MHz
= 10 W;
= 10 W
= 10 W
= 15 V; I
= ±10 V;
CE
C
= 100 A
V
CEK
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
VJ
C
C
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
C
VJ
VJ
VJ
C
= 1200 V
= 25°C unless otherwise stated
= 25°C
= 25°C
= 80°C
= 25°C
= 25°C
= 125°C
= 25°C
= 25°C
= 125°C
= 125°C
= 125°C
= 25°C
= 25°C
= 80°C
= 25°C
= 125°C
= 125°C
= 125°C
MIEB 101W1200EH
min.
min.
5
7430
2.00
1.95
12.5
Ratings
typ.
Ratings
typ.
750
120
460
240
120
330
1.8
2.0
0.9
9.5
9.7
4.2
4.2
55
6
max.
1200
max.
1200
2.20
2.25
±20
±30
183
128
630
200
200
135
2.2
2.4
0.3
0.2
0.4
10
90
7
3
20110511a
2 - 8
Unit
Unit
K/W
K/W
mA
mA
mJ
mJ
mJ
mJ
nA
nC
µC
pF
ns
ns
ns
ns
µs
ns
W
V
V
V
A
A
V
V
V
A
V
A
A
V
V
A