MIEB101W1200EH IXYS, MIEB101W1200EH Datasheet - Page 6

• Manufacturer Part Number: MIEB101W1200EH
• Description: Six-Pack IGBT Modules in E1, E2 and E3-Pack
• Manufacturer: IXYS

Specifications of MIEB101W1200EH

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 183
• Ic80, Tc = 80°c, Igbt, (a): 128
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.8
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 9.7
• Rthjc, Max, Igbt, (k/w): 0.2
• If25, Tc = 25°c, Diode, (a): 170
• If80, Tc = 80°c, Diode, (a): 110

IXYS reserves the right to change limits, test conditions and dimensions.
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[mJ]
Transistor T1 - T6
E
20
15
10
5
0
0
Fig. 7 Typ. turn-on energy and switching times
I
V
V
T
C
E
VJ
CE
GE
=
on
= 125°C
= 600 V
= ±15 V
5
100 A
E
versus gate resistor
rec(off)
10
15
R
G
[Ω]
20
25
t
30
d (on)
t
r
35
200
150
100
50
0
[ns]
t
[mJ]
E
12
10
8
6
4
2
0
0
Fig. 8 Typ. turn-off energy and switching times
E
off
5
versus gate resistor
10
MIEB 101W1200EH
15
R
G
[Ω]
20
I
V
V
T
C
25
CE
GE
VJ
=
= 125°C
= 600 V
= ±15 V
100 A
30
t
d(off)
t
f
35
1200
1000
800
600
400
200
0
20110511a
[ns]
6 - 8
t