MIEB101W1200EH IXYS, MIEB101W1200EH Datasheet - Page 3

• Manufacturer Part Number: MIEB101W1200EH
• Description: Six-Pack IGBT Modules in E1, E2 and E3-Pack
• Manufacturer: IXYS

Specifications of MIEB101W1200EH

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 183
• Ic80, Tc = 80°c, Igbt, (a): 128
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.8
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 9.7
• Rthjc, Max, Igbt, (k/w): 0.2
• If25, Tc = 25°c, Diode, (a): 170
• If80, Tc = 80°c, Diode, (a): 110

IXYS reserves the right to change limits, test conditions and dimensions.
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Symbol
T
T
T
V
CTI
M
R
d
d
R
Weight
 V
Curves are measured on modul level except Fig. 14 to Fig. 17
Module
VJ
VJM
stg
S
A
ISOL
pin to chip
thCH
d
CE
= V
CE(sat)
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting torque (M5)
see 
creep distance on surface
strike distance through air
thermal resistance case to heatsink
+ 2x R
pin to chip
· I
C
Conditions
I
with heatsink compound
ISOL
< 1 mA; 50/60 Hz
t = 1 min
t = 1 s
T
C
= 25°C unless otherwise stated
MIEB 101W1200EH
min.
12.7
-40
-40
9.6
3
Ratings
typ.
300
1.8
0.1
max.
3000
3600
125
150
125
200
6
20110511a
3 - 8
Unit
K/W
mm
mm
mW
Nm
V~
V~
°C
°C
°C
g