FDD18N20LZ Fairchild Semiconductor, FDD18N20LZ Datasheet - Page 3

• Manufacturer Part Number: FDD18N20LZ
• Manufacturer: Fairchild Semiconductor

FDD18N20LZ Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
5000
1000
Figure 1. On-Region Characteristics
0.36
0.30
0.24
0.18
0.12
0.06
100
100
0.1
10
10
1
0.01
0.1
0
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
* Note:
GS
1. V
2. f = 1MHz
= 10V
Drain Current and Gate Voltage
10
GS
V
7V
5V
4.5V
4V
3.5V
3V
V
DS
DS
= 0V
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
0.1
20
(
C ds = shorted
1
30
*Notes:
V
1. 250
2. T
)
GS
* Note : T
V
C
= 10V
40
1
GS
= 25

s Pulse Test
= 20V
o
C
10
J
50
= 25
C
C
C
rss
iss
oss
o
C
10
60
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
100
0.1
10
100
10
1
10
8
6
4
2
0
1
0
0.4
0
150
0.6
V
Variation vs. Source Current
and Temperature
SD
150
o
V
C
, Body Diode Forward Voltage [V]
7
Q
GS
o
2
g
C
, Total Gate Charge [nC]
0.8
, Gate-Source Voltage[V]
V
V
V
-55
25
DS
DS
DS
o
o
25
= 50V
= 100V
= 160V
C
14
C
1.0
o
C
4
* Notes :
1.2
1. V
2. 250
21
Notes:
1. V
2. 250
DS
* Note : I

= 20V
GS
s Pulse Test
1.4

6
= 0V
s Pulse Test
28
D
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1.6
= 16A
8
1.8
35