FDD18N20LZ Fairchild Semiconductor, FDD18N20LZ Datasheet - Page 4

• Manufacturer Part Number: FDD18N20LZ
• Manufacturer: Fairchild Semiconductor

FDD18N20LZ Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
100
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.1
10
1
0.1
-80
*Notes:
1. T
2. T
3. Single Pulse
-40
vs. Temperature
Collector-Emitter Voltage, V
C
J
T
= 150
= 25
J
1
, Junction Temperature
o
C
o
0.01
0
C
0.1
2
1
10
Single pulse
-5
0.01
0.02
0.05
10
0.2
0.1
0.5
40
80
Figure 11. Transient Thermal Response Curve
100
* Notes :
10
CE
[
1. V
2. I
o
-4
C
[V]
D
120
]
GS
= 250uA
100
1ms
30
10 ms
DC
= 0V

s

Rectangular Pulse Duration [sec]
s
1000
160
10
(Continued)
-3
4
10
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
2.4
2.0
1.6
1.2
0.8
0.4
-2
16
12
-80
8
4
0
25
* Notes :
1. Z
2. Duty Factor, D=t
3. T
P
DM

JM
JC
-40
(t) = 1.4
- T
vs. Temperature
T
50
C
vs. Case Temperature
10
T
J
, Junction Temperature
= P
t
C
1
-1
, Case Temperature
t
2
o
DM
C/W Max.
0
* Z
1
/t
75

2
JC
(t)
40
1
100
80
[
o
*Notes:
C
[
1. V
2. I
o
]
C
125
D
120
]
GS
= 8A
www.fairchildsemi.com
= 10V
160
150