FDD5N50NZF Fairchild Semiconductor, FDD5N50NZF Datasheet - Page 4
FDD5N50NZF
Manufacturer Part Number
FDD5N50NZF
Description
These NChannel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDD5N50NZF.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD5N50NZFTM
Manufacturer:
Fairchild Semiconductor
Quantity:
75 790
FDD5N50NZF Rev. C0
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
1.15
1.10
1.05
1.00
0.95
0.90
0.01
0.1
20
10
1
-75 -50
1
Operation in This Area
is Limited by R
vs. Temperature
vs. Case Temperature
T
V
J
, Junction Temperature
DS
, Drain-Source Voltage [V]
0.01
10
0
0.1
DS(on)
2
1
10
*Notes:
0.05
-5
0.5
1. T
2. T
3. Single Pulse
0.2
0.02
0.01
Single pulse
0.1
C
J
= 150
= 25
50
o
DC
C
o
10ms
100
C
Figure 11. Transient Thermal Response Curve
1ms
*Notes:
10
1. V
2. I
[
100
o
-4
100
C
D
]
GS
= 250
μ
s
= 0V
30
Rectangular Pulse Duration [sec]
μ
μ
A
1000
s
150
(Continued)
10
-3
4
10
Figure 10. Maximum Drain Current
-2
5
4
3
2
1
0
25
*Notes:
1. Z
2. Duty Factor, D= t
3. T
P
DM
θ
JM
JC
50
- T
(t) = 2
T
C
10
C
, Case Temperature
= P
t
-1
1
o
t
C/W Max.
2
DM
75
* Z
1
θ
/t
JC
2
(t)
100
1
[
o
C
]
125
www.fairchildsemi.com
150