HY27SA161G1M Hynix Semiconductor, HY27SA161G1M Datasheet - Page 25

• Manufacturer Part Number: HY27SA161G1M
• Description: 1gbit 128mx8bit / 64mx16bit Nand Flash Memory
• Manufacturer: Hynix Semiconductor

Table 9: Program, Erase Time and Program Erase Endurance Cycles
MAXIMUM RATING
Stressing the device above the ratings listed in Table 10, Absolute Maximum Ratings, may cause permanent damage to
the device. These are stress ratings only and operation of the device at these or any other conditions above those indi-
cated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions
for extended periods may affect device reliability.
Table 10: Absolution Maximum Rating
Note: (1). Minimum Voltage may undershoot to -2V for less than 20ns during transitions on input and I/O pins. Maximum voltage
may overshoot to V
GGGGGGGG
DC AND AC PARAMETERS
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device.
The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Mea-
surement Conditions summarized in Table 11, Operating and AC Measurement Conditions. Designers should check that
the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters.
Rev 0.5 / Oct. 2004
Symbol
V
T
T
V
IO
BIAS
STG
Program/Erase Cycles (per block)
CC
(1)
Page Program Time
Block Erase Time
CC
Data Retention
Parameters
+ 2V for less than 20ns during transitions on I/O pins.
Input or Output Voltage
Supply Voltage
Temperature Under Bias
Storage Temperature
Parameter
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
100,000
Min
10
3.3 V devices
3.3 V devices
1.8V devices
1.8V devices
NAND Flash
Typ
200
2
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
Min
-0.6
-0.6
-0.6
-0.6
-50
-65
NAND Flash
Max
500
3
Max
125
150
2.7
4.6
2.7
4.6
cycles
years
Unit
ms
us
Unit
o
o
V
V
V
V
C
C
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