HY27SA161G1M Hynix Semiconductor, HY27SA161G1M Datasheet - Page 39
HY27SA161G1M
Manufacturer Part Number
HY27SA161G1M
Description
1gbit 128mx8bit / 64mx16bit Nand Flash Memory
Manufacturer
Hynix Semiconductor
Datasheet
1.HY27SA161G1M.pdf
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* Application Note
during program.)
Rev 0.5 / Oct. 2004
Reset command must be issued when the controller writes data to another 512Mb.(i.e. When A26 is changed
Figure 34. Resistor Value Waveform Timings for Ready/Busy Signal
400
300
200
100
400
300
200
100
0
0
1
1
30
1.7
1.7
100
2.4
3.6
tf
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Vcc=3.3, CL=100pF
2
Vcc=1.8, CL=30pF
2
60
0.85
1.7
200
1.2
3.6
Rp(K)
Rp(K)
ibusy
3
3
0.57
1.7
90
0.8
3.6
300
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
tr
400
4
4
120
1.7
3.6
0.43
0.6
4
3
2
1
4
3
2
1
39
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