HN29V1G91T-30 Renesas Electronics Corporation., HN29V1G91T-30 Datasheet - Page 2
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HN29V1G91T-30
Manufacturer Part Number
HN29V1G91T-30
Description
128m X 8-bit Ag-and Flash Memory
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.HN29V1G91T-30.pdf
(92 pages)
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Manufacturer
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Part Number:
HN29V1G91T-30
Manufacturer:
HYNIX
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HN29V1G91T-30
• Low power dissipation
• Program time: 600 µs (typ) (Single/Multi bank)
• Erase time: 650 µs (typ) (Single/Multi bank)
• The following architecture is required for data reliability
• Program/Erase Endurance: 10
• Package line up
Ordering Information
Type No.
HN29V1G91T-30
Rev.4.00, Jun.20.2004, page 2 of 89
Read I
Read I
Program I
Program I
Erase I
Erase I
Standby I
Standby I
Deep Standby I
transfer rate: 10 MB/s (Multi bank)
Error correction: 3 bit error correction per 512byte are recommended.
Block replacement: When an error occurs in program page, block replacement including
Wear leveling: Wear leveling is to level Program and Erase cycles in one block in order to reduce
TSOP: TSOP Type-I 48pin package (TFP-48DA)
corresponding page should be done. When an error occurs in erase operation, future access to this
bad block is prohibited. It is required to manage it creating a table or using another appropriate
scheme by the system (Valid blocks: Initial valid blocks for more than 98% per Bank.
Replacement blocks must be ensured more than 1.8% of valid blocks per Bank).
the burden for one block and let the device last for long time. Actually, it does detect the block
which is erased and rewritten many times and replace it with less accessed block.
To secure 10
Erase cycles to one block. You should adopt wear leveling once in 5000 Program and Erase cycles.
It is better to program it as a variable by software.
CC1
CC2
CC5
CC6
SB1
SB2
CC3
CC4
(50 ns cycle): 10 mA (typ)
(35 ns cycle): 15 mA (typ)
(single bank): 10 mA (typ)
(Multi bank): 15 mA (typ)
5
(TTL): 1 mA (max)
(CMOS): 50 µA (max)
(single bank): 10 mA (typ)
(Multi bank): 20 mA (typ)
cycles as the program/erase endurance, need to control not to exceed Program and
Operating voltage (V
2.7 V to 3.6 V
SB3
: 5 µA (max)
5
cycles
CC
)
Organization
×8
Package
12.0 × 20.00 mm
0.5 mm pitch
48-pin plastic TSOPI (TFP-48DA)
2
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