HN29V1G91T-30 Renesas Electronics Corporation., HN29V1G91T-30 Datasheet - Page 8

• Manufacturer Part Number: HN29V1G91T-30
• Description: 128m X 8-bit Ag-and Flash Memory
• Manufacturer: Renesas Electronics Corporation.

HN29V1G91T-30
Mode selection
The address input, command input, and data input/output operation of the device are controlled by 4-5,
92, 9-, +-, CLE, ALE, 4-, PRE signals. The following shows the operation logic table.
Logic Table
Mode
Read Mode
Write Mode
Data Input
Data Output
During Read (Busy)
During Program (Busy)
During Erase (Busy)
Write Protect
Stand-by
Deep Stand-by
Notes: 1. H: V
Program/Erase Characteristics
Program Time
Cache Program Time
Dummy Busy for Cache Program
Dummy Busy Time
Number of Partial Program Cycles in a Same Page
Block Erase Time
Page mode Erase Verify Time
Block mode Erase Verify Time
Rev.4.00, Jun.20.2004, page 8 of 89
2. PRE must be “H” fix when using Power On Auto Read and “L” fix when not using it.
3. 4-5, 92, PRE must be set L: V
Command Input
Address Input
(4clock)
Command Input
Address Input
(4clock)
iH
, L: V
iL
, ×: V
iH
V
or V
SS
4-5*
± 0.2 V
H
H
H
H
H
H
H
H
H
H
H
iL
3

iLD
/V
/V
V
V
, H: V
SS
SS
CC
CC
92*
± 0.2 V
± 0.2 V
± 0.2 V
± 0.2 V
H
H
H
H
H
×
×
×
×
L
3
iHD
Symbol
t
t
t
t
N
t
t
t
PROG
CPROG
CBSY
DBSY
BERS
PEV
BEV
, ×: V
+-
H
L
L
L
L
L
L
L
×
×
×
×
iHD
or V
Min



1




9-
H
H
×
×
×
×
×
iLD
CLE
Typ
0.6
0.6
3


0.65


H
H
L
L
L
L
L
×
×
×
×
×
ALE
H
H
L
L
L
L
L
×
×
×
×
×
Max
2.4
4.8
2400
4
8
20
50
70
4-
H
H
H
H
H
H
×
×
×
×
×
Unit
ms
ms
µs
µs
cycles
ms
µs
µs
/V
/V
V
V
SS
SS
CC
CC
PRE*
Notes
×*
×*
×*
×*
×*
×*
×*
×*
×*
×*
± 0.2 V
± 0.2 V
± 0.2 V
± 0.2 V
2
2
2
2
2
2
2
2
2
2
3