FDU6780A Fairchild Semiconductor, FDU6780A Datasheet - Page 4

• Manufacturer Part Number: FDU6780A
• Description: N-channel Powertrench Mosfet
• Manufacturer: Fairchild Semiconductor

©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
Typical Characteristics
100
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
Figure 3. Normalized On- Resistance
80
60
40
20
-75 -50 -25
Figure 1.
0
0
0
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
V
V
I
GS
D
GS
V
DS
vs Junction Temperature
= 16.4 A
GS
= 8 V
1
= 10 V
= 3 V
= 10 V
T
V
V
0.5
On-Region Characteristics
J
DS
GS
,
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
2
0
DRAIN TO SOURCE VOLTAGE (V)
V
T
GS
J
25
= 175
= 6 V
3
1.0
50
µ
o
s
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
4
75 100 125 150 175
J
= 25 °C unless otherwise noted
T
J
= -55
5
1.5
T
J
o
C )
= 25
o
V
C
V
GS
GS
6
o
= 4.5 V
= 4 V
C
µ
s
2.0
7
4
100
0.1
10
25
20
15
10
1
6
5
4
3
2
1
0
5
0.2
Figure 2.
Figure 4.
Forward Voltage vs Source Current
0
4
Figure 6.
vs Drain Current and Gate Voltage
T
V
V
J
GS
GS
= 175
V
0.4
SD
= 0 V
= 4 V
, BODY DIODE FORWARD VOLTAGE (V)
20
Normalized On-Resistance
V
o
On-Resistance vs Gate to
GS
C
I
Source Voltage
D
Source to Drain Diode
,
,
V
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
0.6
GS
6
= 4.5 V
40
0.8
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
T
= 8 V
60
J
T
= -55
1.0
J
8
= 25
I
D
o
C
V
= 16.4 A
V
T
o
T
GS
C
J
GS
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J
80
= 150
1.2
= 25
= 6 V
= 10 V
o
o
C
µ
C
µ
s
s
1.4
100
10