BSH301 NXP Semiconductors, BSH301 Datasheet

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BSH301

Manufacturer Part Number
BSH301
Description
Dual N-channel Enhancement Mode Mos Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BSH301.pdf (5 pages)
DISCRETE SEMICONDUCTORS
DATA SHEET
BSH301
Dual N-channel enhancement
mode MOS transistor
1999 Apr 06
Objective specification

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BSH301 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BSH301 Dual N-channel enhancement mode MOS transistor Objective specification 1999 Apr 06 ...

Page 2

... CONDITIONS 1. note 2 3 Objective specification BSH301 MAM423 CAUTION MIN. MAX 0.4 5 0.04 1. UNIT ...

Page 3

... Maximum permissible dissipation per transistor. Device mounted on a printed-circuit board with R tie-point C/W. 1999 Apr 06 CONDITIONS note 1 S note note note 4 amb note 5 amb note 2 3 Objective specification BSH301 MIN. MAX. UNIT 1.75 W 1. +150 C 55 +150 C 1 ...

Page 4

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 06 4 Objective specification BSH301 ...

Page 5

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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