BSH301 NXP Semiconductors, BSH301 Datasheet - Page 2

• Manufacturer Part Number: BSH301
• Description: Dual N-channel Enhancement Mode Mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Two N-channel enhancement mode MOS transistors in an
8-pin plastic TSSOP8 package.
PINNING SOT530 (TSSOP8)
QUICK REFERENCE DATA
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
1999 Apr 06
V
V
V
V
I
R
P
D
SYMBOL
40 m on-state resistance at 2.5 V gate drive
R
ESD gate protection.
Li-Ion safety switch
Power management.
DS
SD
GS
GSth
DSon
tot
Dual N-channel enhancement mode MOS transistor
DSon
PIN
S
1
2
3
4
5
6
7
8
is the temperature at the soldering of the drain lead.
rating down to 1.8 V
Full Data Sheet will appear: on WWW (Internet; details in front section/back of this HB/CD-ROM) or updated Loose leaf
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
SYMBOL
d1
s1
s1
g1
g2
s2
s2
d1
PARAMETER
drain 1
source 1
source 1
gate 1
gate 2
source 2
source 2
drain 1
DESCRIPTION
V
V
T
V
T
S
S
GD
DS
GS
= 80 C; note 1
= 80 C
= V
= 2.5 V; I
= 0; I
2
GS
CONDITIONS
S
The device is supplied in an antistatic package. The gate
inputs must be protected against static discharge during
transport or handling.
handbook, halfpage
; I
= 1.25 A
D
D
= 1 mA
Fig.1 Simplified outline (SOT530) and symbol.
= 3.5 A
8
1
4
5
CAUTION
0.4
MAM423
MIN.
Objective specification
d 1 s 1 s 1
d 1 s 2 s 2
20
1
5
0.04
1.75
8
MAX.
BSH301
V
V
V
V
A
W
g 2
g 1
UNIT